随身查
扫码添加小程序
手机随时查器件
| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| ELM5964-7PST | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| FLM5964-8F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
| AD | LM5111-1MX/NOPB | Texas Instruments | 桥式驱动器，高低压开关,LM5111 Dual 5A Compound Gate Driver | |||||
| FLM5053-25F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
| FLM5359-35F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN | - | |||||
| ELM5964-16F | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| FLM5053-12F | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| FLM5359-25F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
| FLM5972-12F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
| ELM5964-7PS | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| FLM5964-18F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
| FLM5359-45F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN | - | |||||
| ELM5964-4PS | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, CASE I2C, 7 PIN | - | |||||
| FLM5053-8F | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| FLM5972-4F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
| ELM5964-10F | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| FLM5359-4F | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| FLM5359-18F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
| FLM5359-8F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
| FLM5053-4F | SUMITOMO ELECTRIC Device Innovations Inc | Transistor | - | |||||
| FLM5964-25F | SUMITOMO ELECTRIC Device Innovations Inc | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
登录 
苏公网安备 32059002001873号